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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDX84/a/b/c description high dc current gain- : h fe = 1000(min)@ i c = -5a collector-emitter sustaining voltage- : v ceo(sus) = -45v(min)- BDX84; -60v(min)- BDX84a -80v(min)- BDX84b; -100v(min)- BDX84c applications power switching hammer drivers series and shunt regulators audio amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit BDX84 -45 BDX84a -60 BDX84b -80 v cbo collector-base voltage BDX84c -100 v BDX84 -45 BDX84a -60 BDX84b -80 v ceo collector-emitter voltage BDX84c -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a i b b base current -250 ma p c collector power dissipation @ t c =25 125 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDX84/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDX84 -45 BDX84a -60 BDX84b -80 v ceo(sus) collector-emitter sustaining voltage BDX84c i c = -100ma; i b = 0 -100 v v ce( sat ) collector-emitter saturation voltage i c = -5a; i b = -10ma b -2.0 v v be( on )-1 base-emitter on voltage i c = -5a; v ce = -3v -2.8 v v be( on )-2 base-emitter on voltage i c = -10a; v ce = -3v -4.5 v BDX84 v ce = -45v; v be = 1.5v v ce = -45v; v be = 1.5v; t c = 150 -0.5 -3.0 BDX84a v ce = -60v; v be = 1.5v v ce = -60v; v be = 1.5v; t c = 150 -0.5 -3.0 BDX84b v ce = -80v; v be = 1.5v v ce = -80v; v be = 1.5v; t c = 150 -0.5 -3.0 i cev collector cutoff current BDX84c v ce = -100v; v be = 1.5v v ce = -100v; v be = 1.5v; t c = 150 -0.5 -3.0 ma BDX84 v ce = -20v; i b = 0 b BDX84a v ce = -30v; i b = 0 b BDX84b v ce = -40v; i b = 0 b i ceo collector cutoff current BDX84c v ce = -50v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -5.0 ma h fe-1 dc current gain i c = -1a; v ce = -3v 750 h fe-2 dc current gain i c = -5a; v ce = -3v 1000 h fe-3 dc current gain i c = -10a; v ce = -3v 250 isc website www.iscsemi.cn 2 |
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